HEMT: High electron mobility transistor also called heterostructure FET(HFET).
It is also called Modulation doped FET (Mod-FET).
It is a field effect transistor which has junction between two materials with different bandgaps as channel.
Common material combination used is GaAs with AlGaAs.
Those device who use indium shows better high frequency performance but in recent years gallium nitride has attracted attention because of their high performance.
Like other FET's the HEMTS are used in integrated circuits as digital on off switches.
HEMT transistor are able to operate at higher frequencies than ordinary transistors at mmWave frequencies.
HEMT are used in high frequency products such as cellphones, satellite and radar.
Advantage: They have high gain and this makes them as useful amplifier and they also have high switching speed.
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